? semiconductor components industries, llc, 2012 september, 2012 ? rev. 0 1 publication order number: NTNS3A65PZ/d NTNS3A65PZ small signal mosfet ? 20 v, ? 281 ma, single p ? channel, sot ? 883 (xdfn3) 1.0 x 0.6 x 0.4 mm package features ? single p ? channel mosfet ? ultra low profile sot ? 883 (xdfn3) 1.0 x 0.6 x 0.4 mm for extremely thin environments such as portable electronics ? low r ds(on) solution in the ultra small 1.0 x 0.6 mm package ? 1.5 v gate drive ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? high side switch ? high speed interfacing ? optimized for power management in ultra portable solutions maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 8 v continuous drain current (note 1) steady state t a = 25 c i d ? 281 ma t a = 85 c ? 202 t 5 s t a = 25 c ? 332 power dissipation (note 1) steady state t a = 25 c p d 155 mw t 5 s 218 pulsed drain current t p = 10 s i dm ? 842 ma operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) (note 2) i s ? 130 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using the minimum recommended pad size, or 2 mm 2 , 1 oz cu. 2. pulse test: pulse width 300 s, duty cycle 2% http://onsemi.com v (br)dss r ds(on) max i d max ? 20 v 1.3 @ ? 4.5 v 2.0 @ ? 2.5 v ? 281 ma device package shipping ? ordering information NTNS3A65PZt5g sot ? 883 (pb ? free) 8000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. http://onsemi.com marking diagram sot ? 883 (xdfn3) case 506cb 65 = specific device code m = date code 65 m s (2) d (3) g (1) p ? channel mosfet 2 1 3 3.4 @ ? 1.8 v 4.5 @ ? 1.5 v
NTNS3A65PZ http://onsemi.com 2 thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 3) r ja 804 c/w junction ? to ? ambient ? t 5 s (note 3) r ja 574 3. surface ? mounted on fr4 board using the minimum recommended pad size, or 2 mm 2 , 1 oz cu. electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss / t j i d = ? 250 a, ref to 25 c 11 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 20 v t j = 25 c ? 1 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 5 v 10 a on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.4 ? 1.0 v negative threshold temperature coefficient v gs(th) /t j 2.2 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 200 ma 0.9 1.3 v gs = ? 2.5 v, i d = ? 100 ma 1.3 2.0 v gs = ? 1.8 v, i d = ? 50 ma 1.8 3.4 v gs = ? 1.5 v, i d = ? 10 ma 2.3 4.5 forward transconductance g fs v ds = ? 5 v, i d = ? 200 ma 0.58 s source ? drain diode voltage v sd v gs = 0 v, i s = ? 100 ma ? 0.8 ? 1.2 v charges & capacitances input capacitance c iss v gs = 0 v, freq = 1 mhz, v ds = ? 10 v 44 pf output capacitance c oss 6.7 reverse transfer capacitance c rss 5.5 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 10 v; i d = ? 200 ma 1.1 nc threshold gate charge q g(th) 0.1 gate ? to ? source charge q gs 0.2 gate ? to ? drain charge q gd 0.2 switching characteristics, v gs = 4.5 v (note 4) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 200 ma, r g = 2 18 ns rise time t r 32 turn ? off delay time t d(off) 178 fall time t f 84 4. switching characteristics are independent of operating junction temperatures
NTNS3A65PZ http://onsemi.com 3 typical characteristics 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 ? 50 ? 25 0 25 50 75 100 125 150 v gs = ? 4.5 v i d = ? 200 ma v gs = ? 1.8 v i d = ? 50 ma 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 figure 1. on ? region characteristics ? v ds , drain ? to ? source voltage (v) ? i d , drain current (a) v gs = ? 4.5 t j = 25 c ? 4.0 v ? 3.5 v ? 3 v ? 2.5 v ? 2 v ? 1.8 v ? 1.5 v ? 1.2 v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 00.511.522.53 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (v) ? i d , drain current (a) t j = 25 c t j = 125 c t j = ? 55 c v ds = ? 5 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t j = 25 c i d = ? 200 ma figure 3. on ? resistance vs. gate voltage ? v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 figure 4. on ? resistance vs. drain current and gate voltage ? i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) t j = 25 c v gs = ? 2.5 v v gs = ? 4.5 v v gs = ? 1.5 v v gs = ? 1.8 v figure 5. on ? resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain ? to ? source res- istance (normalized) 10 100 1000 2 4 6 8 10 12 14 16 18 20 figure 6. drain ? to ? source leakage current vs. voltage ? v ds , drain ? to ? source voltage (v) ? i dss , leakage (na) v gs = 0 v t j = 125 c t j = 85 c
NTNS3A65PZ http://onsemi.com 4 typical characteristics 0.90 ? 50 ? 25 0 25 50 75 100 125 150 i d = ? 250 a 0.80 0.70 0.60 0.50 0.40 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 02468101214161820 figure 7. capacitance variation ? v ds , drain ? to ? source voltage (v) c, capacitance (pf) t j = 25 c v gs = 0 v f = 1 mhz c iss c oss c rss 0 2 4 6 8 10 12 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 figure 8. gate ? to ? source voltage vs. total charge q g , total gate charge (nc) ? v gs , gate ? to ? source voltage (v) q t q gs q gd ? v ds , drain ? to ? source voltage (v) v ds v gs 10 100 1000 1 10 100 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) t, time (ns) v dd = ? 10 v v gs = ? 4.5 v t d(off) t d(on) t f t r 0.1 1.0 10.0 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1. 3 figure 10. diode forward voltage vs. current ? v sd , source ? to ? drain voltage (v) ? i s , source current (a) t j = 25 c t j = 125 c t j = ? 55 c t j , starting junction temperature ( c) ? v gs(th) (v) figure 11. threshold voltage 0.001 0.010 0.100 1.000 0.1 1 10 10 0 figure 12. maximum rated forward biased safe operating area ? v ds , drain ? to ? source voltage (v) ? i d , drain current (a) v gs ? 8 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 100 s 10 s 1 ms dc 10 ms v ds = ? 10 v i d = ? 0.2 v t j = 25 c
NTNS3A65PZ http://onsemi.com 5 typical characteristics 900 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 13. thermal response pulse time (sec) r (t) ( c/w) effective transient thermal resistance 0.1 duty cycle = 0.5 0.2 0.05 0.02 0.01 single pulse 800 700 600 500 400 300 200 100 0 r ja steady state = 804 c/w
NTNS3A65PZ http://onsemi.com 6 package dimensions ? 883 (xdfn3), 1.0x0.6, 0.35p case 506cb issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. exposed copper allowed as shown. a b e d bottom view b 0.10 c top view 0.10 c a a1 0.10 c 0.10 c c seating plane side view dim min max millimeters a 0.340 0.440 a1 0.000 0.030 b 0.075 0.200 d2 0.620 bsc e 0.350 bsc l 0.170 0.300 solder footprint* dimensions: millimeters 1.10 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 1 l 0.43 recommended d 0.950 1.075 e 0.550 0.675 e2 0.425 0.550 a m 0.10 b c m 0.05 c e e/2 2x 3x d2 e2 2x 0.41 0.55 0.20 2x package outline pin one reference note 3 3x 1 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NTNS3A65PZ/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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